PART |
Description |
Maker |
BCM857BS BCM857BV BCM857BV115 BCM857DS135 BCM857DS |
PNP/PNP matched double transistors; Package: SOT457 (SC-74); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR PNP/PNP matched double transistors
|
NXP Semiconductors N.V.
|
MPS6651 MPS6601 MPS6602 MPS6652 ON2329 |
Amplifier Transistors 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 (MPS6602) Amplifier Transistors Voltage and current are negative for PNP transistors From old datasheet system
|
MOTOROLA[Motorola Inc] ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
|
PDTA124E PDTA124EEF PDTA124EM PDTA124ET PDTA124EEF |
PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟 PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 22 kOhm 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors NXP Semiconductors N.V.
|
PDTA123JEF PDTA123JE115 PDTA123JM PDTA123JK PDTA12 |
PNP resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟 PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm
|
NXP Semiconductors N.V.
|
PDTA115ES PDTA115E PDTC115EU PDTA115EE PDTA115EEF |
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT416 (SC-75); Container: Tape reel smd PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 From old datasheet system PDTA115E series; PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT883 (SC-101); Container: Tape reel smd
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
PDTA123YT215 PDTA123YE |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
DMJT9435-13 DMJT9435 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-4 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
|
Diodes, Inc. Diodes Incorporated
|
MJE5731A MJE5731 MJE5730 ON2039 |
POWER TRANSISTORS PNP SILICON 1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB 1.0 AMPERE POWER TRANSISTORS From old datasheet system
|
ON Semiconductor
|
PDTA143TEF PDTA143TE PDTA143T PDTA143TK PDTA143TM |
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PNP resistor-equipped transistors; R1 = 4.7 k楼?, R2 = open
|
NXP Semiconductors
|
2N6437 2N6438 2N6437-D |
POWER TRANSISTORS PNP SILICON 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA High-Power PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
BC327-16 BC327 BC327-25 BC328-25 BC328 BC328-16 |
Amplifier Transistors(PNP Silicon) Amplifier Transistors(PNP) ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
|
MOTOROLA INC ON Semiconductor MOTOROLA[Motorola, Inc] Motorola, Inc.
|
|